DocumentCode :
3556791
Title :
New pseudomorphic MODFETs utilizing Ga0.47-uIn0.53+uAs/Al0.48+uIn0.52-uAs heterostructures
Author :
Kuo, J.M. ; Lalevic, B. ; Chang, T.Y.
Author_Institution :
AT&T Bell Laboratories, Holmdel, NJ
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
460
Lastpage :
463
Abstract :
A new pseudomorphic modulation-doped field-effect transistor (MODFET) utilizing a Ga0.47-uIn0.53+uAS/Al0.48+uIn0.52-uAs (u = 0.07) heterojunction on InP substrate is proposed, and has been fabricated and characterized. The molecular beam epitaxially (MBE) grown heterostructure samples have sheet carrier densities in excess of 1012cm-2and exhibit electron mobilities as high as 12050, 59970, and 87300 cm2/V-sec at 300, 77, and 4.3K. The samples do not exhibit light sensitivity of persistent photoconductivity effects in any significant way Pseudomorphic MODFETs fabricated from these samples exhibit DC transconductances as high as 271 mS/ram and 227 mS/mm at room temperature for 1.6 µm and 2.9 µm gate-lengths respectively. An electron saturation velocity as high as 2.9 × 107cm/sec and a unity current gain cutoff frequency of 23.5 GHZ for the 1.6 µm gate length device have been deduced. These results show that Ga0.4In0.6As/Al0.55In0.45As pseudomorphic MODFETs are very promising for high-speed and high-frequency applications.
Keywords :
Charge carrier density; Electron mobility; Epitaxial layers; FETs; HEMTs; Heterojunctions; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191219
Filename :
1486477
Link To Document :
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