Title :
Ultrahigh-speed GaAs static frequency dividers
Author :
Jensen, J.F. ; Salmon, L.G. ; Deakin, D.S. ; Delaney, M.J.
Author_Institution :
Hughes Research Laboratories, Malibu, California
Abstract :
This paper describe the design, fabrication, and testing of high-speed GaAs static divider circuits that operate up to 17.9 GHz at room temperature. The dividers were implemented in both buffered FET logic (BFL) and capacitively enhanced logic (CEL), and were fabricated with 0.2 µm gate length MESFETs, active channels grown with molecular beam epitaxy (MBE), and airbridge interconnects.
Keywords :
Circuit testing; FETs; Fabrication; Frequency conversion; Gallium arsenide; Integrated circuit interconnections; Logic; MESFETs; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191224
