DocumentCode
3556800
Title
Concept and basic technologies for 3-D IC structure
Author
Akasaka, Yoichi ; Nishimura, Tadashi
Author_Institution
Mitsubishi Electric Corporation, Itami, Japan
Volume
32
fYear
1986
fDate
1986
Firstpage
488
Lastpage
491
Abstract
VLSI will be rearching to limit of minimization in 1990´s, and after that, further increase of packing density or a number of transistors in a chip might depend on the vetical integration (3-D IC) technology. The 3-D IC consisting of completely stacked active layers offers the flexibility of the circuit design and ccmposition of various devices. This will lead upto new system design and novel functional device. It will become a big trend for VLSI in the next generation.
Keywords
Crystallization; Electron beams; Image sensors; Intelligent sensors; Organic materials; Random access memory; Signal processing; Sputter etching; Temperature; Three-dimensional integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191227
Filename
1486485
Link To Document