Scaling and transport properties of high electron mobility transistors

We present the scaling and transport properties of an ideal ized HEMT structure at 300 K. A two dimensional model based on three moments of the Boltzmann equation is used to investi gate a constant voltage scaling scheme. Detailed results are presented for gate lengths of 2.0,1.33, 1.0, 0.67 and 0.5 microme ters. Parts of a movie generated by simulations on a Cray X-MP are shown during the presentation to demonstrate our conclu sions. Recommendations are made for the improvement of existing analytical device models as suggested by our extensive simulations.