• DocumentCode
    3556830
  • Title

    A two-dimensional numerical model of amorphous silicon thin-film transistors

  • Author

    Toyabe, Toru ; Masuda, Hiroo ; Kaneko, Yoshiyuki ; Sasano, Akira ; Fukushima, Hiroshi ; Tsukada, Toshihisa

  • Author_Institution
    Hitachi, Ltd., Tokyo, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    575
  • Lastpage
    578
  • Abstract
    Electrical characteristics of amorphous silicon thin-film transitors (a-Si TFTs) are strongly affected by trapped electrons in localized states in the energy gap. In this paper, we present a two-dimensional numerical model of amorphous silicon thin-film transistors including a trapped electron model. Use of an accurate localized state density distribution ensures high simulation accuracy. A compact model is derived that can describe crowding characteristics was derived based on the observation of simulation results.
  • Keywords
    Amorphous silicon; Electric variables; Electron mobility; Electron traps; Insulation; Laboratories; Numerical models; Poisson equations; Switches; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191254
  • Filename
    1486512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556830