• DocumentCode
    3556832
  • Title

    Comparison and trends in today´s dominant E2technologies

  • Author

    Lai, S.K. ; Dham, V.K. ; Guterman, D.

  • Author_Institution
    Intel Corporation, Santa Clara, CA
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    580
  • Lastpage
    583
  • Abstract
    This paper reviews the three dominant E2technologies today, namely the two floating gate approaches of thin tunnel oxide and oxide of textured poly and the dual dielectric approach of MNOS. It evaluates each approach with respect to cell design, operation, manufacturability, compatibility with established process technologies and reliability. It follows with a comparison of the technologies in the areas of development entry cost, scaling and reliability. After a review of the market place, this paper concludes with a projection of the requirements of E2technologies to support full function, commodity E2memories E2PROM as well as low cost microcontrollers and ASIC (Application Specific Integrated Circuits).
  • Keywords
    Costs; DH-HEMTs; Dielectrics; EPROM; Electrons; Manufacturing processes; Nonvolatile memory; Silicon compounds; Tunneling; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191256
  • Filename
    1486514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556832