DocumentCode
3556835
Title
High density contactless, self aligned EPROM cell array technology
Author
Esquivel, J. ; Mitchell, A. ; Paterson, J. ; Riemenschnieder, B. ; Tieglaar, H. ; Coffman, T. ; Dolby, D. ; Gill, H. ; Lahiry, R. ; Lin, S. ; McElroy, D. ; Schreck, J. ; Shah, P.
Author_Institution
Texas Instruments (Dallas)
Volume
32
fYear
1986
fDate
1986
Firstpage
592
Lastpage
595
Abstract
A revolutionary EPROM cell technology has been developed. Its suitability to realize high density memories with performance and reIiability comparable to the conventional EPROMS has been demonstrated with a 64K bit density vehicle. This self-aligned contactless cell is in a crosspoint array configuration, and occupies 33 percent less area than a conventional cell at comparable design rules. The planar, contactless technology has enhanced manufacturability, scalability and is ideally suited for memories beyond megabit density.
Keywords
CMOS technology; Contacts; EPROM; Instruments; Manufacturing; Nonvolatile memory; PROM; Scalability; Surfaces; Vehicles;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1986 International
Type
conf
DOI
10.1109/IEDM.1986.191259
Filename
1486517
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