• DocumentCode
    3556842
  • Title

    Near single carrier-type multiplication in a multiple graded-well structure for a solid-state photomultiplier

  • Author

    Allam, J. ; Capasso, F. ; Alavi, K. ; Cho, A.Y.

  • Author_Institution
    University of Surrey, Surrey, England
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    614
  • Lastpage
    617
  • Abstract
    We report the observation of very large ionization rate ratios (β/α) in multiple graded-well Al0.48In0.52As/Ga0.47In0.53As avalanche photodiodes, grown by MBE. Avalanche multiplication occurs when holes heated by the field in the barrier layers impact ionize thermally-generated holes dynamically stored in the wells over the valence band-edge discontinuity. Since electrons are not confined in the graded structure, there is no multiplication of electrons by this process. This is the first observation of near single carrier-type multiplication in a III-V material.
  • Keywords
    Charge carrier processes; Electric breakdown; Gold; Ionization; Photoconductivity; Photomultipliers; Solid state circuits; Superlattices; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191265
  • Filename
    1486523
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556842