Title :
Carrier multiplication in self-aligned bipolar transistors - applications in process monitoring and failure analysis
Author_Institution :
Siemens AG, Muenchen, FRG
Abstract :
A measurement scheme for the extraction of current multiplication data using bipolar transistors is presented. The data so obtained are shown to be in excellent agreement with data derived from BUceo/ BUcbo breakdown measurements. It is found that structures with strongly inhomogeneous collector doping show considerable deviation from MILLER´s law. Utilization of the method for detecting local breakdown events is outlined.
Keywords :
Bipolar transistors; Condition monitoring; Current measurement; Data mining; Doping; Electric breakdown; Event detection; Failure analysis; Microelectronics; Photoconductivity;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191276
