• DocumentCode
    3556861
  • Title

    Electrical properties of thin Ta2O5films grown by chemical vapor deposition

  • Author

    Saitoh, M. ; Mori, T. ; Tamura, H.

  • Author_Institution
    Sony Corporation Research Center, Yokohama, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    680
  • Lastpage
    683
  • Abstract
    This paper describes the growth and electrical properties of tantalum pentoxide (Ta2O5) film (15-100nm) prepared by using a chemical vapor deposition (CVD) method from Ta-organic source compound, and also the TiO2-doping effect on the dc conduction property of the thin-film capacitor. Highly reliable films as thin as 15nm were obtained by examining the critical CVD parameters such as the growth temperature and the gas flow conditions. The dc leakage of Al/Ta2O5/Si MIS capacitors was remarkably reduced by the dilute TiO2doping as low enough for the use of a planer storage capacitor in the future DRAM devices.
  • Keywords
    Chemical vapor deposition; Conductive films; Dielectric breakdown; Dielectric constant; Dielectric thin films; MIM capacitors; Optical films; Semiconductor films; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191283
  • Filename
    1486541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556861