• DocumentCode
    3556862
  • Title

    Oxidized Ta2O5/Si3N4dielectric films for ultimate-STC dRAMs

  • Author

    Shinriki, Hiroshi ; Nishioka, Yasushiro ; Ohji, Yuzuru ; Mukai, Kiichiro

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    684
  • Lastpage
    687
  • Abstract
    A new dielectric film technology characterized by a novel multilayer structure (Ta2O5/SiO2/Si3N4) on poly-silicon is developed to realize high-density dRAMs. The SiO2interface is grown by dry oxidation of the Ta2O5/Si3N4layers at temperatures higher than 900°C. This film has a capacitance per unit area from 5.5 to 6.0 fF/µm2, which is equivalent to 6.0 to 6.5nm thick SiO2. The leakage current at an effective electric field of 5MV/cm is less than 10-9A/cm2, and the extrapolated time to failure (TDDB) is longer than 1000 years.
  • Keywords
    Annealing; Capacitors; Dielectric films; Fabrication; Leakage current; Oxidation; Semiconductor films; Silicon; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191284
  • Filename
    1486542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556862