Mechanism of hot carrier induced degradation in MOSFET´s

To clarify the degradation mechanism caused by hot carrier injection, the distribution of the emitted carrier density at the interface are simulated by the two-dimensional device simulator. The validity of the emitted carrier distribution is checked by the measured gate current-voltage characteristics It is shown that both the distribution of emitted electrons and holes are essential to explain the measured transistor degradation in both conventional and LDD MOSFET. Furthermore, the difference of the emitted carrier distribution between LDD and conventional MOSFET, gives a good explanation of the difference of measured conductance degradation in early stress stage.