Microwave AlxGa1-xAs hetero-MIS gate depletion-mode InP field effect transistors

Depletion-mode InP FET´s were successfully fabricated by employing MBE-grown undoped AlxGa1-xAS (x=0.0 and 0.3) layers as a gate insulator. The fabricated 1 µm gate InP FET´s with an ion-implanted n-channel exhibited good and stable depletion-mode characteristics and microwave performance. 8.3 dB maximum power gain was obtained for a GaAs gate InP FET at 12 GHz, and more than 7 dB power gain was obtained for both GaAs and Al0.3Ga0.7As gate InP FET´s.