• DocumentCode
    3556888
  • Title

    Microwave AlxGa1-xAs hetero-MIS gate depletion-mode InP field effect transistors

  • Author

    Itoh, T. ; Kasahara, K. ; Ozawa, T. ; Ohata, K.

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    32
  • fYear
    1986
  • fDate
    1986
  • Firstpage
    771
  • Lastpage
    774
  • Abstract
    Depletion-mode InP FET´s were successfully fabricated by employing MBE-grown undoped AlxGa1-xAS (x=0.0 and 0.3) layers as a gate insulator. The fabricated 1 µm gate InP FET´s with an ion-implanted n-channel exhibited good and stable depletion-mode characteristics and microwave performance. 8.3 dB maximum power gain was obtained for a GaAs gate InP FET at 12 GHz, and more than 7 dB power gain was obtained for both GaAs and Al0.3Ga0.7As gate InP FET´s.
  • Keywords
    Current-voltage characteristics; Etching; Fabrication; Gallium arsenide; Gold; Indium phosphide; Microwave FETs; Molecular beam epitaxial growth; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1986 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1986.191308
  • Filename
    1486566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556888