DocumentCode :
3556905
Title :
High frequency modulation doped field effect transistors in InAlAs/InGaAs/InP material system
Author :
Aksun, M.I. ; Peng, C.K. ; Ketterson, A.A. ; Morkoc, H. ; Gleason, K.R.
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, Illinois
Volume :
32
fYear :
1986
fDate :
1986
Firstpage :
822
Lastpage :
823
Keywords :
Epitaxial layers; FETs; Frequency modulation; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFET circuits; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1986 International
Type :
conf
DOI :
10.1109/IEDM.1986.191324
Filename :
1486582
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3556905
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