Title :
Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths
Author :
Shahidi, G.G. ; Antoniadis, D.A. ; Smith, H.I.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, Massachusetts
Keywords :
Boron; Doping; Electrical resistance measurement; Electrons; MOSFETs; Nitrogen; Parasitic capacitance; Silicon; Temperature dependence; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191325
