DocumentCode

3556906

Title

Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths

Author

Shahidi, G.G. ; Antoniadis, D.A. ; Smith, H.I.

Author_Institution

Massachusetts Institute of Technology, Cambridge, Massachusetts

Volume

32

fYear

1986

fDate

1986

Firstpage

824

Lastpage

825

Keywords

Boron; Doping; Electrical resistance measurement; Electrons; MOSFETs; Nitrogen; Parasitic capacitance; Silicon; Temperature dependence; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1986 International

Type

conf

DOI

10.1109/IEDM.1986.191325

Filename

1486583