Title :
High-performance GaAs MESFET´s
Author :
Zeghbroeck, B.J. ; Patrick, W. ; Meier, H. ; Vettiger, P. ; Wolf, P.
Author_Institution :
IBM Research Division, Ruschlikon, Switzerland
Keywords :
Breakdown voltage; Capacitance; Electric breakdown; FETs; Fabrication; Frequency conversion; Gallium arsenide; Gold; MESFETs; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1986 International
DOI :
10.1109/IEDM.1986.191328
