• DocumentCode
    3556972
  • Title

    A high speed super self-aligned bipolar-CMOS technology

  • Author

    Chiu, Tzu-Yin ; Chin, Gen M. ; Lau, Maureen Y. ; Hanson, Ronald C. ; Morris, Mark D. ; Lee, Kwing F. ; Voshchenkov, Alexander M. ; Swartz, Robert G. ; Archer, Vance D. ; Finegan, Sean N.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, NJ
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    24
  • Lastpage
    27
  • Abstract
    An ideal device structure for integrating bipolar and CMOS is reported in this paper. Both the vertical npn and MOS devices have new non-overlapping super self-aligned structures. With a single 5V supply, averaged per stage delay of 82ps and 125ps have been measured for 0.6µm and 0.85µm (Leff) CMOS ring oscillators. Bipolar transistors have also been fabricated with a nominal current gain of 100.
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Delay; Implants; MOS devices; Merging; Ring oscillators; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191338
  • Filename
    1487296
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556972