DocumentCode :
3556994
Title :
Potential of bipolar complementary device/Circuit technology
Author :
Wiedmann, Siegfried K.
Author_Institution :
IBM Laboratory, Boeblingen, Germany
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
96
Lastpage :
99
Abstract :
Bipolar complementary transistor logic circuits have been very little explored. The main reason certainly is that the bipolar transistor as a current controlled device is not as suited for such circuit applications as the voltage controlled MOSFET. After briefly explaining the major obstacles for CMOS-like bipolar complementary circuits and deriving the stringent device/technology prerequisites for any practical realisation, the recently proposed Charge Buffered Logic as a unique bipolar complementary circuit concept is described. Its potential for high speed at microwatt DC power, the key device parameters, and critical design aspects are discussed.
Keywords :
Bipolar transistor circuits; Bipolar transistors; CMOS logic circuits; Cutoff frequency; Delay effects; Diodes; Logic circuits; Logic devices; MOSFETs; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191358
Filename :
1487316
Link To Document :
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