• DocumentCode
    3556994
  • Title

    Potential of bipolar complementary device/Circuit technology

  • Author

    Wiedmann, Siegfried K.

  • Author_Institution
    IBM Laboratory, Boeblingen, Germany
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    96
  • Lastpage
    99
  • Abstract
    Bipolar complementary transistor logic circuits have been very little explored. The main reason certainly is that the bipolar transistor as a current controlled device is not as suited for such circuit applications as the voltage controlled MOSFET. After briefly explaining the major obstacles for CMOS-like bipolar complementary circuits and deriving the stringent device/technology prerequisites for any practical realisation, the recently proposed Charge Buffered Logic as a unique bipolar complementary circuit concept is described. Its potential for high speed at microwatt DC power, the key device parameters, and critical design aspects are discussed.
  • Keywords
    Bipolar transistor circuits; Bipolar transistors; CMOS logic circuits; Cutoff frequency; Delay effects; Diodes; Logic circuits; Logic devices; MOSFETs; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191358
  • Filename
    1487316