DocumentCode
3556994
Title
Potential of bipolar complementary device/Circuit technology
Author
Wiedmann, Siegfried K.
Author_Institution
IBM Laboratory, Boeblingen, Germany
Volume
33
fYear
1987
fDate
1987
Firstpage
96
Lastpage
99
Abstract
Bipolar complementary transistor logic circuits have been very little explored. The main reason certainly is that the bipolar transistor as a current controlled device is not as suited for such circuit applications as the voltage controlled MOSFET. After briefly explaining the major obstacles for CMOS-like bipolar complementary circuits and deriving the stringent device/technology prerequisites for any practical realisation, the recently proposed Charge Buffered Logic as a unique bipolar complementary circuit concept is described. Its potential for high speed at microwatt DC power, the key device parameters, and critical design aspects are discussed.
Keywords
Bipolar transistor circuits; Bipolar transistors; CMOS logic circuits; Cutoff frequency; Delay effects; Diodes; Logic circuits; Logic devices; MOSFETs; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191358
Filename
1487316
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