Title :
A 1.4 million element, full frame CCD image sensor with vertical overflow drain for anti-blooming and low color crosstalk
Author :
Nichols, D.N. ; Chang, W.C. ; Burkey, B.C. ; Stevens, E.G. ; Trabka, E.A. ; Losee, D.L. ; Tredwell, T.J. ; Stancampiano, C.V. ; Kelly, T.M. ; Khosla, R.P. ; Lee, T.H.
Author_Institution :
Eastman Kodak Company, Rochester, New York
Abstract :
Blooming and color crosstalk must be greatly suppressed in solid-state image sensors for nearly all imaging applications. A vertical overflow drain has been developed for a 1.4 megapixel image sensor for blooming suppression and low color crosstalk. The overflow drain is formed using a uniform flat p-well. This paper describes the modeling, fabrication, and experimental data associated with implementing vertical overflow in this device.
Keywords :
Charge coupled devices; Charge-coupled image sensors; Clocks; Crosstalk; Filling; Image sensors; Image storage; Semiconductor process modeling; Silicon; Solid state circuits;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191365
