Title :
IrSi Schottky-barrier infrared image sensor
Author :
Yutani, Naoki ; Kimata, Masafumi ; Denda, Masahiko ; Iwade, Shuhei ; Tsubouchi, Natsuro
Author_Institution :
Mitsubishi Electric Corporation, Hyogo, Japan
Abstract :
An iridium silicide Schottky-barrier (IrSi SB) infrared image sensor with 512×512 pixels has been developed. The Charge Sweep Device architecture is applied to the device. The detector is an IrSi/p-Si SB diode, which has a cutoff wavelength of 7.3µm. The device is cooled to 62K for reducing thermally generated dark current. The device operates at the NTSC frame rate (30 frames/s). The examples of thermal imaging with this device are demonstrated.
Keywords :
Charge-coupled image sensors; Dark current; Fabrication; Infrared detectors; Infrared image sensors; Large scale integration; Pixel; Silicides; Silicon; Temperature sensors;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191366
