DocumentCode
3557005
Title
Enhancement mode HgCdTe MISFETs and circuits for focal plane applications
Author
Schiebel, R.A.
Author_Institution
Texas Instruments Incorporated
Volume
33
fYear
1987
fDate
1987
Firstpage
132
Lastpage
135
Abstract
Long wavelength enhancement mode HgCdTe MISFETs are characterized at 77K, and the first integrated circuits using these devices demonstrated. Accurate models are demonstrated for MISFET current-voltage characteristics and small signal behaviour. MISFET breakdown is characterized as a function of channel length. Noise measurements on HgCdTe MISFETs and circuits show 1/f behaviour to at least 100 kHz, and a noise level suitable for focal plane applications. Other characteristics of HgCdTe circuits are studied, demonstrating performance adequate for focal plane applications.
Keywords
Circuits; Current-voltage characteristics; Diodes; Electric breakdown; Insulation; MISFETs; Passivation; Scattering; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191368
Filename
1487326
Link To Document