• DocumentCode
    3557029
  • Title

    Selective CVD tungsten silicide for VLSI applications

  • Author

    Ohba, Takayuki ; Inoue, Shin-ichi ; Maeda, Mamoru

  • Author_Institution
    Fujitsu Limited, Kawasaki, Japan
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    213
  • Lastpage
    216
  • Abstract
    Selective CVD tungsten silicide for barrier metal and contact metallization, and for via-hole filling has been developed for VLSI devices. This new process makes possible low-temperature filling of via holes up to several order of magnitude faster than conventional selective CVD tungsten. Selective CVD tungsten silicide was investigated for its deposition characteristics, contact electrical properties, and WSix/Al bilayer properties.
  • Keywords
    Contacts; Filling; Hydrogen; Leakage current; Metallization; Silicides; Surface morphology; Temperature; Tungsten; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191390
  • Filename
    1487348
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557029