Selective CVD tungsten silicide for VLSI applications

Selective CVD tungsten silicide for barrier metal and contact metallization, and for via-hole filling has been developed for VLSI devices. This new process makes possible low-temperature filling of via holes up to several order of magnitude faster than conventional selective CVD tungsten. Selective CVD tungsten silicide was investigated for its deposition characteristics, contact electrical properties, and WSix/Al bilayer properties.