DocumentCode
3557034
Title
5.2GHz monolithic GaAs optoelectronic receiver
Author
Van Zeghbroeck, B.J. ; Harder, Ch. ; Halbout, J.M. ; Jäckel, H. ; Meier, H. ; Patrick, W. ; Vettiger, P. ; Wolf, P.
Author_Institution
IBM Research, Zurich Research Laboratory, Rüschlikon, Switzerland
Volume
33
fYear
1987
fDate
1987
Firstpage
229
Lastpage
232
Abstract
A 5.2GHz monolithic GaAs optoelectronic receiver will be presented. It consists of an interdigitated Schottky-barrier photodiode integrated with a GaAs transimpedance amplifier. The amplifier has an enhancement driver/depletion load input stage connected to a source follower matched to 50Ω. The circuit is implemented with 0.35µm recessed-gate GaAs MESFET´s. The receiver is fully DC coupled and is compatible with E/D MESFET logic circuits. We obtained a bandwidth of 5.2GHz for an effective transimpedance into a 50Ω load of 300Ω yielding a transimpedance-bandwidth product of 1.5THzΩ. We also report on a single photodiode fabricated within a 100Ω transmission line, which was measured using 1.8ps laser pulses and yielded an electrical pulse with FWHM of only 4.8ps. This corresponds to a bandwidth of 105GHz.
Keywords
Bandwidth; Coupling circuits; Distributed parameter circuits; Driver circuits; Gallium arsenide; Logic circuits; MESFET circuits; Optical pulses; Photodiodes; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191395
Filename
1487353
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