DocumentCode
3557037
Title
High speed modulation and CW operation of AlGaAs/GaAs lasers on Si
Author
Chen, H.Z. ; Paslaski, J. ; Ghaffari, A. ; Wang, H. ; Morkoç, H. ; Yariv, A.
Author_Institution
California Institute of Technology, Pasadena, CA
Volume
33
fYear
1987
fDate
1987
Firstpage
238
Lastpage
241
Abstract
Microwave modulation and CW operation of AlGaAs lasers grown by MBE on Si substrates have been obtained for the first time. Ridge waveguide lasers(10µm×380µm) were modulated with a microwave signal up to 2.5GHz which is notable considering the structure used. Near and far field measurements indicated a single transverse mode and a narrow beam angle (4.8°). Finally, polarization measurements appear to show the solely TE nature of the emission.
Keywords
Gallium arsenide; Laser modes; Masers; Molecular beam epitaxial growth; Optical materials; Polarization; Semiconductor device measurement; Substrates; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191398
Filename
1487356
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