An analytical model of a new magnetotransistor: The SSIMT

An analytical model of a recently reported magnetic sensor is presented. The device under consideration is the Suppressed Sidewall Injection Magneto-Transistor (SSIMT), a linear magne-totransistor with extremely high sensitivity. The model provides a means for the derivation of the sensitivity of the device and predicts the functional dependence of the sensitivity on the bios point of the SSIMT. Current deflection is assumed to be the dominant mechanism responsible for the magnetic response of the device. The high sensitivity of the device and the large range of available sensitivities are explained as a consequence of the confinement of the laterally flowing minority electrons.