Title :
Room temperature dynamic memories for GaAs integrated circuits
Author :
Dungan, T.E. ; Cooper, J.A., Jr. ; Melloch, M.R.
Author_Institution :
Purdue University, West Lafayette, IN
Abstract :
This paper describes PN-junction-based, majority-carrier cells for GaAs dynamic memories. Capacitance recovery measurements on simple test structures indicate room-temperature storage times of 3 minutes and 1.5 hours for cells fabricated in GaAs or Al0.2Ga0.8As, respectively. Punchthrough-isolated and direct-access cell configurations are discussed.
Keywords :
Application specific integrated circuits; Capacitance measurement; Gallium arsenide; High speed integrated circuits; MODFET integrated circuits; Material storage; Random access memory; Silicon; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191428
