DocumentCode :
3557102
Title :
SOI photodiode array stacked on VDMOS for optical switching
Author :
Kioi, Kazumasa ; Miyajima, Toshiaki ; Yoshioka, Minoru ; Doi, Tsukasa ; Koba, Masayoshi
Author_Institution :
Sharp Corporation, Nara, Japan
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
460
Lastpage :
463
Abstract :
This paper describes the first development of the single chip optical switching device for optical coupling MOS relay by SOI technology. The device is constructed with a laser recrystailized SOI layer as a photoelectric element, which is fabricated in the upper layer in the device and shades the power MOSFET fabricated in the lower layer. On illuminating the device, the power MOSFET can be switched on Accordingly, an optical switching MOSFET with the function of a photodiode and a MOSFET is realized as a single chip device.
Keywords :
Isolation technology; MOSFET circuits; Optical arrays; Optical coupling; Optical devices; Photodiodes; Power MOSFET; Power generation; Relays; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191458
Filename :
1487416
Link To Document :
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