DocumentCode :
3557112
Title :
Surface impact ionization in silicon devices
Author :
Slotboom, J.W. ; Streutker, G. ; Davids, G.J.T. ; Hartog, P.B.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
494
Lastpage :
497
Abstract :
In the past, carrier ionization rates in the silicon bulk have been measured and reported extensively. We present experiments and accurate electric field calculations for deriving the surface impact ionization rate of electrons. It is given by 
[cm-1] Due to the lower mean free path at the surface, this ionization rate is much smaller then the well known bulk values and falls-off more steeply for low electric fields. The consequences for the simulation of MOS substrate currents will be shown.
[cm-1] Due to the lower mean free path at the surface, this ionization rate is much smaller then the well known bulk values and falls-off more steeply for low electric fields. The consequences for the simulation of MOS substrate currents will be shown.Keywords :
Charge measurement; Current measurement; Electrons; Geometry; Impact ionization; Laboratories; MOSFETs; Shift registers; Silicon devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191468
Filename :
1487426
Link To Document :
