• DocumentCode
    3557112
  • Title

    Surface impact ionization in silicon devices

  • Author

    Slotboom, J.W. ; Streutker, G. ; Davids, G.J.T. ; Hartog, P.B.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, The Netherlands
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    494
  • Lastpage
    497
  • Abstract
    In the past, carrier ionization rates in the silicon bulk have been measured and reported extensively. We present experiments and accurate electric field calculations for deriving the surface impact ionization rate of electrons. It is given by \\alpha _{n}(surface) = 2.45 \\cdot 10^{6} \\cdot \\exp(-1.92.10^{6}/E) [cm-1] Due to the lower mean free path at the surface, this ionization rate is much smaller then the well known bulk values and falls-off more steeply for low electric fields. The consequences for the simulation of MOS substrate currents will be shown.
  • Keywords
    Charge measurement; Current measurement; Electrons; Geometry; Impact ionization; Laboratories; MOSFETs; Shift registers; Silicon devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191468
  • Filename
    1487426
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557112