DocumentCode
3557116
Title
A method to reduce the peak current density in a via
Author
Lee, Keunmyung ; Voorde, P.V. ; Varon, Marty ; Nishi, Yoshio
Author_Institution
Hewlett-Packard Co., Palo Alto, California
Volume
33
fYear
1987
fDate
1987
Firstpage
510
Lastpage
513
Abstract
A new method to alleviate the current crowding problems in the via connect of VLSI is presented. Current crowding in advanced metal systems may cause long term reliability problems for integrated circuits because the mean time to failure due to electromigration decreases as the maximum current density increases. The FCAP3 program (three-dimensional Poisson equation solving program) is used to study current flow in three-dimensional metal structures such as vias.
Keywords
Conducting materials; Conductivity; Current density; Current distribution; Dielectric materials; Electromigration; Integrated circuit reliability; Poisson equations; Proximity effect; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191472
Filename
1487430
Link To Document