DocumentCode :
3557116
Title :
A method to reduce the peak current density in a via
Author :
Lee, Keunmyung ; Voorde, P.V. ; Varon, Marty ; Nishi, Yoshio
Author_Institution :
Hewlett-Packard Co., Palo Alto, California
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
510
Lastpage :
513
Abstract :
A new method to alleviate the current crowding problems in the via connect of VLSI is presented. Current crowding in advanced metal systems may cause long term reliability problems for integrated circuits because the mean time to failure due to electromigration decreases as the maximum current density increases. The FCAP3 program (three-dimensional Poisson equation solving program) is used to study current flow in three-dimensional metal structures such as vias.
Keywords :
Conducting materials; Conductivity; Current density; Current distribution; Dielectric materials; Electromigration; Integrated circuit reliability; Poisson equations; Proximity effect; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191472
Filename :
1487430
Link To Document :
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