DocumentCode
3557117
Title
Three dimensional transient simulation of electro-thermal behavior in semiconductor devices and its applications
Author
Akcasu, O.E. ; Bouknight, J.L. ; Luich, T. ; Jerome, R. ; Leibiger, S.
Author_Institution
CRAY Research Inc., Chippewa Falls, WI
Volume
33
fYear
1987
fDate
1987
Firstpage
514
Lastpage
517
Abstract
In this paper we deal with the solution of three dimensional transient heat-flow equation for a given arbitrary power distribution in a region with different non-linear and non-uniform thermal properties. The time dependent power distribution in the region under investigation can be given either externally or supplied by the solution of the semiconductor carrier transport equations in the electrically active sub-region. The simulator is specifically written for AIM cell programming simulations. The solution method employed in the simulator is finite-difference method using Crank-Nicolson technique for time discretization, employing multi-grid approaches. The number of equations solved for each time step is in the order of 106. As a result of this work AIM cell fusing mechanism, electro-thermal interactions between neighboring cells, diffusion profile optimization issues will be covered.
Keywords
Artificial intelligence; Differential equations; Finite difference methods; Mathematical model; Nonlinear equations; Photonic band gap; Power distribution; Semiconductor devices; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191473
Filename
1487431
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