• DocumentCode
    3557117
  • Title

    Three dimensional transient simulation of electro-thermal behavior in semiconductor devices and its applications

  • Author

    Akcasu, O.E. ; Bouknight, J.L. ; Luich, T. ; Jerome, R. ; Leibiger, S.

  • Author_Institution
    CRAY Research Inc., Chippewa Falls, WI
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    514
  • Lastpage
    517
  • Abstract
    In this paper we deal with the solution of three dimensional transient heat-flow equation for a given arbitrary power distribution in a region with different non-linear and non-uniform thermal properties. The time dependent power distribution in the region under investigation can be given either externally or supplied by the solution of the semiconductor carrier transport equations in the electrically active sub-region. The simulator is specifically written for AIM cell programming simulations. The solution method employed in the simulator is finite-difference method using Crank-Nicolson technique for time discretization, employing multi-grid approaches. The number of equations solved for each time step is in the order of 106. As a result of this work AIM cell fusing mechanism, electro-thermal interactions between neighboring cells, diffusion profile optimization issues will be covered.
  • Keywords
    Artificial intelligence; Differential equations; Finite difference methods; Mathematical model; Nonlinear equations; Photonic band gap; Power distribution; Semiconductor devices; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191473
  • Filename
    1487431