Title :
New ultra high density EPROM and flash EEPROM with NAND structure cell
Author :
Masuoka, Fujio ; Momodomi, Masaki ; Iwata, Yoshihisa ; Shirota, Riichiro
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Abstract :
In order to realize ultra high density EPROM and Flash EEPROM, a NAND structure cell is proposed. This new structure is able to shrink cell size without scaling of device dimensions. The NAND structure cell realizes a cell as small as 6.43 µm2using 1.0 µm design rule. As a result, cell area per bit can be reduced by 30% compared with that of a 4M bit EPROM using the conventional structure and the same design rule. It is confirmed that each bit in a NAND cell is able to be programmed selectively. This high performance NAND structure cell is applicable to high density nonvolatile memories as large as 8M bit EPROM and Flash-EEPROM or beyond.
Keywords :
Dielectrics; EPROM; Electrodes; Electrons; Nonvolatile memory; Resistors; Silicon; Thickness control; Very large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191485
