Title :
Anisotropic interaction between electrons and piezoelectric phonons in semiconductor heterojunctions in magnetic field
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In any 2D electron system with asymmetric quantizing potential in the presence of a magnetic field parallel to the 2D plane, different interactions between the electron system and any phonons having mutually opposite directions of wave vectors (anisotropic interaction) appear, which leads to the emergence of a new unusual thermomagnetic effect: the electromotive force for homogeneous heating of the electron system appears. This universal phenomenon is analyzed for the case of anisotropic interaction between electrons and piezoelectric phonons in GaAs-GaAlAs heterojunction. The consequence of this anisotropic interaction is an anomalous temperature dependence of the thermomagnetic effect at low temperature
Keywords :
III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium arsenide; semiconductor heterojunctions; thermomagnetic effects; two-dimensional electron gas; 2D electron system; GaAs-GaAlAs; anisotropic interaction; anomalous temperature dependence; asymmetrical quantizing potential; electromotive force; electron-phonon interaction; homogeneous heating; low temperature; magnetic field; momentum transfer; phonon emission; quantum macroscopic effect; semiconductor heterojunctions; thermomagnetic effect; Acoustic waves; Anisotropic magnetoresistance; Charge carrier processes; Electron emission; Heating; Heterojunctions; Magnetic analysis; Magnetic fields; Phonons; Temperature dependence;
Conference_Titel :
Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on
Conference_Location :
Ulsan
Print_ISBN :
0-7803-6486-4
DOI :
10.1109/KORUS.2000.865933
