Anisotropic interaction between electrons and piezoelectric phonons in semiconductor heterojunctions in magnetic field

Author

Kibis, Oleg V.

Author_Institution

Novosibirsk State Tech. Univ., Russia

Volume

1

fYear

2000

fDate

2000

Lastpage

116

Abstract

In any 2D electron system with asymmetric quantizing potential in the presence of a magnetic field parallel to the 2D plane, different interactions between the electron system and any phonons having mutually opposite directions of wave vectors (anisotropic interaction) appear, which leads to the emergence of a new unusual thermomagnetic effect: the electromotive force for homogeneous heating of the electron system appears. This universal phenomenon is analyzed for the case of anisotropic interaction between electrons and piezoelectric phonons in GaAs-GaAlAs heterojunction. The consequence of this anisotropic interaction is an anomalous temperature dependence of the thermomagnetic effect at low temperature

Keywords

III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium arsenide; semiconductor heterojunctions; thermomagnetic effects; two-dimensional electron gas; 2D electron system; GaAs-GaAlAs; anisotropic interaction; anomalous temperature dependence; asymmetrical quantizing potential; electromotive force; electron-phonon interaction; homogeneous heating; low temperature; magnetic field; momentum transfer; phonon emission; quantum macroscopic effect; semiconductor heterojunctions; thermomagnetic effect; Acoustic waves; Anisotropic magnetoresistance; Charge carrier processes; Electron emission; Heating; Heterojunctions; Magnetic analysis; Magnetic fields; Phonons; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on

Conference_Location

Ulsan

Print_ISBN

0-7803-6486-4

Type

conf

DOI

10.1109/KORUS.2000.865933

Filename

865933