Intervalley overflow of electrons in heavily doped silicon

Author

Makarov, Evgeny A. ; Sychev, A.Yu.

Author_Institution

Novosibirsk State Tech. Univ., Russia

Volume

1

fYear

2000

fDate

2000

Lastpage

122

Abstract

A computer simulation of the effect of overflow of electrons between conduction band minima of n-type silicon is carried out. On the basis of the numerical solution of the equation, the neutrality association of Fermi level position and electron concentration in minima are obtained at major monoaxial strain. The obtained results can be used for simulation of charge carrier transport in strained layers of Ge_xSi_1-x alloys

Keywords

Fermi level; carrier density; conduction bands; elemental semiconductors; heavily doped semiconductors; impurity states; many-valley semiconductors; silicon; stress effects; Fermi level position; GeSi; Si; charge carrier transport; computer simulation; conduction band minima; deformation potential; electron concentration; electroneutrality association; heavily doped silicon; intervalley overflow of electrons; many-valley semiconductors; monoaxial strain; strained layers; Capacitive sensors; Computer simulation; Electrons; Ionization; Mechanical sensors; Nonlinear equations; Physics; Semiconductor devices; Silicon; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on

Conference_Location

Ulsan

Print_ISBN

0-7803-6486-4

Type

conf

DOI

10.1109/KORUS.2000.865934

Filename

865934