Title :
Intervalley overflow of electrons in heavily doped silicon
Author :
Makarov, Evgeny A. ; Sychev, A.Yu.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
A computer simulation of the effect of overflow of electrons between conduction band minima of n-type silicon is carried out. On the basis of the numerical solution of the equation, the neutrality association of Fermi level position and electron concentration in minima are obtained at major monoaxial strain. The obtained results can be used for simulation of charge carrier transport in strained layers of GexSi1-x alloys
Keywords :
Fermi level; carrier density; conduction bands; elemental semiconductors; heavily doped semiconductors; impurity states; many-valley semiconductors; silicon; stress effects; Fermi level position; GeSi; Si; charge carrier transport; computer simulation; conduction band minima; deformation potential; electron concentration; electroneutrality association; heavily doped silicon; intervalley overflow of electrons; many-valley semiconductors; monoaxial strain; strained layers; Capacitive sensors; Computer simulation; Electrons; Ionization; Mechanical sensors; Nonlinear equations; Physics; Semiconductor devices; Silicon; Tensile stress;
Conference_Titel :
Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on
Conference_Location :
Ulsan
Print_ISBN :
0-7803-6486-4
DOI :
10.1109/KORUS.2000.865934
