• DocumentCode
    3557146
  • Title

    High power GaAlAs/GaAs HBTs for microwave applications

  • Author

    Sheng, N.H. ; Chang, M.F. ; Asbeck, P.M. ; Wang, K.C. ; Sullivan, G.J. ; Miller, D.L. ; Higgins, J.A. ; Sovero, E. ; Basit, H.

  • Author_Institution
    Rockwell International Science Center, Thousand Oaks, CA
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    619
  • Lastpage
    622
  • Abstract
    This paper reports the attainment of high microwave output, up to 0.4 W cw at 10 GHz, with GaAlAs/ GaAs heterojunction bipolar transistors. In addition to high power, the HBTs displayed excellent power-added efficiency (4896) and power gain (7 dB). A key factor in obtaining these high powers and efficiencies is the ability to support high collector-emitter voltages without breakdown. Breakdown voltage was up to 23 V (BVcbo) in the devices reported here. The experimental data are in good agreement with a theoretical model of I-V characteristics near breakdown. The cutoff frequency ftwas found to vary with Vceas expected for electron-drift at a saturation veloclty of 1 × 107cm/s across the base-collector depletion region.
  • Keywords
    Breakdown voltage; Doping; Epitaxial layers; Gain; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Power transistors; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191503
  • Filename
    1487461
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557146