• DocumentCode
    3557150
  • Title

    Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion

  • Author

    Orlowski, M. ; Mazuré, C. ; Lau, F.

  • Author_Institution
    Siemens AG, München, Federal Republic of Germany
  • Volume
    33
  • fYear
    1987
  • fDate
    1987
  • Firstpage
    632
  • Lastpage
    635
  • Abstract
    We show for the first time that the reoxidation step after the gate patterning strongly affects the transistor short channel behavior. This particular oxidation induces a laterally non-uniform channel profile. From the comparison of simulation and experimental transistor data an effective interstitial decay length Liis extracted, determining the extent of local OED effects. We find Li=1.4µm for dry oxidation at 900°C.
  • Keywords
    Data mining; Doping profiles; Etching; Fabrication; Implants; MOSFET circuits; Microelectronics; Oxidation; Research and development; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1987 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1987.191507
  • Filename
    1487465
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3557150