Title :
Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion
Author :
Orlowski, M. ; Mazuré, C. ; Lau, F.
Author_Institution :
Siemens AG, München, Federal Republic of Germany
Abstract :
We show for the first time that the reoxidation step after the gate patterning strongly affects the transistor short channel behavior. This particular oxidation induces a laterally non-uniform channel profile. From the comparison of simulation and experimental transistor data an effective interstitial decay length Liis extracted, determining the extent of local OED effects. We find Li=1.4µm for dry oxidation at 900°C.
Keywords :
Data mining; Doping profiles; Etching; Fabrication; Implants; MOSFET circuits; Microelectronics; Oxidation; Research and development; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191507