High performance SOIMOSFET using ultra-thin SOI film

Advantages of using an ultra-thin SOI substrate for SOIMOSFET are discussed using a 2- carrier/2-dimensional simulation. Ultra-thin SOIMOSFET has been shown to possess sharp subthreshold slope and high punchthrough resistance nearly independent of doping concentration. Low field mobility in ultra-thin SOIMOSFET has been predicted to increase up to approximately the maximum value which is obtainable in the inversion layer. The disappearance of kink associated with thinning the SOI film has been reproduced in the simulation. Moreover, it has been found that the current overshoot is virtually suppressed in thin-SOI MOSFET, enabling one to obtain a stable current irrespective of pulse intervals. These results bring SOIMOSFETs an anticipation as a promising alternative for bulk MOSFETs in the application of high speed and small-featured devices.