DocumentCode
3557157
Title
"The merged P-I-N Schottky (MPS) rectifier: A high-voltage, high-speed power diode"
Author
Baliga, Jayant B. ; Chang, Hsueh-Rong
Author_Institution
General Electric Company, Schenectady, N. Y.
Volume
33
fYear
1987
fDate
1987
Firstpage
658
Lastpage
661
Abstract
Experimental confirmation of the theoretically predicted superior characteristics of the MPS rectifier for high voltage, high frequency power switching applications has been obtained by the fabrication of devices with aluminum Schottky barriers. These devices exhibit a 6 to 8 fold smaller reverse recovery stored charge and operate at 1.5 to 3 times the forward current density when compared with the P-I-N rectifer. Typical applications are in motor drive and switch mode power supply circuits.
Keywords
Aluminum; Fabrication; Frequency; P-i-n diodes; PIN photodiodes; Rectifiers; Schottky barriers; Schottky diodes; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191514
Filename
1487472
Link To Document