DocumentCode :
3557159
Title :
A large area MOS-GTO with wafer-repair technique
Author :
Stoisiek, M. ; Beyer, M. ; Kiffe, W. ; Schultz, H.-J. ; Schmid, H. ; Schwarzbauer, H. ; Stengl, R. ; Turkes, P. ; Theis, D.
Author_Institution :
Siemens AG, München, West Germany
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
666
Lastpage :
669
Abstract :
Turn-off thyristors with MOS-controlled emitter-base shorts (MOS-GTOs) are fabricated by using IC technology. Therefore, the device area is limited to about 1 cm2. However, typical power devices for currents >100 amps need to have areas well above this value. We now succeeded in realizing a MOS-GTO of 3 cm diameter by applying a laboratory type wafer repair technique. Processing failures, like shorts of some kind, are treated in a way which keeps this failures electrical inactive. These devices are comparable to conventional thyristors in their on-state and blocking behaviour. Turn-off currents of about 700 amps can be achieved at low anode-voltages. However, at high anode-voltages the turnoff ability is limited by avalanche injection phenomena.
Keywords :
Contacts; Current density; Current measurement; Density measurement; Fabrication; Laboratories; Manufacturing processes; Semiconductor device measurement; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191516
Filename :
1487474
Link To Document :
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