DocumentCode :
3557186
Title :
3-D high-voltage CMOS ICs by recrystallized SOI merged with bulk control-unit
Author :
Kawamura, S. ; Sasaki, N. ; Kawai, S. ; Shirato, T. ; Aneha, N. ; Nakano, M.
Author_Institution :
Fujitsu Limited, Kawasaki, Japan
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
758
Lastpage :
761
Abstract :
A three-dimensional (3-D)high-voltage flat-panel display scan driver composed of high-voltage offset-gate SOI output circuits merged with low-voltage bulk CMOS control-units has successfully been fabricated by using a CW-Ar laser recrystallization technology. The SOI high-voltage circuits are operated as a power-supply voltage of 60 ∼ 180V with an output current of more than 100mA for a channel length of 10µm and offset length of 20µm. With this technology, a monolithic integration of high-voltage output circuits and well-established low-voltage bulk VLSI can easily be realized.
Keywords :
Breakdown voltage; CMOS technology; Control systems; Driver circuits; Laser fusion; Leakage current; Monolithic integrated circuits; Optical control; Silicon; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191542
Filename :
1487500
Link To Document :
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