LDMOS and LIGT´s in CMOS technology for power integrated circuits

In MOS Power Integrated Circuits, the Lateral Double Diffused MOS Transistor (LDMOS) has been used as a power device because of its ease of integration with CMOS circuitry. In this paper, two versions of a Switched Mode Power Supply chip are described using Lateral Insulated Gate Transistor (LIGT) in one and LDMOS in the other. The LIGT version results in substantial reduction of die size for the same functionality because of the reduced specific on-resistance of the LIGT in comparison with LDMOS. An-type epitaxial layer process and RESURF concept has been used to implement the two high voltage designs with CMOS control circuitry.