DocumentCode
3557194
Title
720-780 nm AlGaAs/GaAs DFB lasers with InGaAsP waveguiding layers
Author
Takiguchi, H. ; Kudo, H. ; Kaneiwa, S. ; Sakane, C. ; Hijikata, T.
Author_Institution
Sharp Corp. Central Res. Labs., Japan
Volume
33
fYear
1987
fDate
1987
Firstpage
788
Lastpage
791
Abstract
Distributed-feedback AlGaAs lasers of 720-780 nm emmision wavelength with GaAs lattice matched InGaAsP waveguide layers are fabricated. The LOC structure is grown on GaAs substrate by liquid phase epitaxy, and the laser diode fabrication is the same as the V-channeled substrate inner stripe lasers. They operate in a single-longitudinal -mode during temperature range of 40 °C. The threshold current as low as 145 mA for 720 nm and 120 mA for 780 nm are obtained under cw operation at room temperature.
Keywords
Diode lasers; Epitaxial growth; Gallium arsenide; Lab-on-a-chip; Lattices; Optical device fabrication; Substrates; Temperature distribution; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191550
Filename
1487508
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