720-780 nm AlGaAs/GaAs DFB lasers with InGaAsP waveguiding layers

Distributed-feedback AlGaAs lasers of 720-780 nm emmision wavelength with GaAs lattice matched InGaAsP waveguide layers are fabricated. The LOC structure is grown on GaAs substrate by liquid phase epitaxy, and the laser diode fabrication is the same as the V-channeled substrate inner stripe lasers. They operate in a single-longitudinal -mode during temperature range of 40 °C. The threshold current as low as 145 mA for 720 nm and 120 mA for 780 nm are obtained under cw operation at room temperature.