DocumentCode :
3557198
Title :
Improved fundamental properties in
Author :
Hayakawa, T. ; Suyama, T. ; Takahashi, K. ; Kondo, M. ; Yamamoto, S. ; Hijikata, T. ; Kondo, Makoto ; Yamamoto, Seiichi ; Hijikata, T.
Author_Institution :
Sharp Corporation, Nara, Japan
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
797
Lastpage :
800
Abstract :
Lower threshold current density and threshold-temperature sensitivity have been realized in
Keywords :
Anisotropic magnetoresistance; Gallium arsenide; Laser transitions; Molecular beam epitaxial growth; Photoluminescence; Quantum well devices; Quantum well lasers; Substrates; Temperature sensors; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191553
Filename :
1487511
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557198
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