DocumentCode
3557198
Title
Improved fundamental properties in
Author
Hayakawa, T. ; Suyama, T. ; Takahashi, K. ; Kondo, M. ; Yamamoto, S. ; Hijikata, T. ; Kondo, Makoto ; Yamamoto, Seiichi ; Hijikata, T.
Author_Institution
Sharp Corporation, Nara, Japan
Volume
33
fYear
1987
fDate
1987
Firstpage
797
Lastpage
800
Abstract
Lower threshold current density and threshold-temperature sensitivity have been realized in
Keywords
Anisotropic magnetoresistance; Gallium arsenide; Laser transitions; Molecular beam epitaxial growth; Photoluminescence; Quantum well devices; Quantum well lasers; Substrates; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191553
Filename
1487511
Link To Document