DocumentCode :
3557207
Title :
Advanced bipolar process using selective poly- and epitaxial-Si (SPEG) technique
Author :
Deguchi, T. ; Mieno, F. ; Haga, N. ; Nakamura, S. ; Shimizu, A. ; Miyake, T. ; Yamauchi, T. ; Takada, T. ; Inayoshi, K.
Author_Institution :
Fujitsu, Ltd. Kawasaki, Japan
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
835
Lastpage :
837
Keywords :
Bipolar transistors; Epitaxial layers; Fabrication; Hydrogen; Inductors; Infrared heating; Parasitic capacitance; Ring oscillators; Silicon; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191562
Filename :
1487520
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557207
