مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3557209

Title :

An 0.8 µm 256K BiCMOS SRAM technology

Author :

Havemann, R.H. ; Eklund, R.E. ; Haken, R.A. ; Scott, D.B. ; Tran, H.V. ; Fung, P.K. ; Ham, T.E. ; Favreau, D.P. ; Virkus, R.L.

Author_Institution :

Texas Instruments, Incorporated, Dallas, Texas

fYear :

1987

fDate :

6-9 Dec. 1987

Firstpage :

841

Lastpage :

843

Keywords :

Annealing; BiCMOS integrated circuits; CMOS process; CMOS technology; Etching; Implants; Oxidation; Random access memory; Resistors; Substrates;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 1987 International

Conference_Location :

Washington, DC, USA

Type :

conf

DOI :

10.1109/IEDM.1987.191564

Filename :

1487522

Link To Document :