An 0.8 µm 256K BiCMOS SRAM technology

Author

Havemann, R.H. ; Eklund, R.E. ; Haken, R.A. ; Scott, D.B. ; Tran, H.V. ; Fung, P.K. ; Ham, T.E. ; Favreau, D.P. ; Virkus, R.L.

Author_Institution

Texas Instruments, Incorporated, Dallas, Texas

fYear

1987

fDate

6-9 Dec. 1987

Firstpage

841

Lastpage

843

Keywords

Annealing; BiCMOS integrated circuits; CMOS process; CMOS technology; Etching; Implants; Oxidation; Random access memory; Resistors; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1987 International

Conference_Location

Washington, DC, USA

Type

DOI

10.1109/IEDM.1987.191564

Filename

1487522

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