DocumentCode

3557210

Title

Increased degradation of half-micron PMOSFETs due to swapped pulse stressing

Author

Koyanagi, M. ; Lewis, A. ; Martin, R. ; Huang, T. ; Chen, J.

Author_Institution

Xerox, Palo Alto Research Center, Palo Alto, CA

Volume

33

fYear

1987

fDate

1987

Firstpage

844

Lastpage

847

Keywords

CMOS technology; Degradation; Electrons; Implants; Laboratories; MOSFETs; Pulse circuits; Pulse measurements; Stress measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1987 International

Type

conf

DOI

10.1109/IEDM.1987.191565

Filename

1487523