Title :
Increased degradation of half-micron PMOSFETs due to swapped pulse stressing
Author :
Koyanagi, M. ; Lewis, A. ; Martin, R. ; Huang, T. ; Chen, J.
Author_Institution :
Xerox, Palo Alto Research Center, Palo Alto, CA
Keywords :
CMOS technology; Degradation; Electrons; Implants; Laboratories; MOSFETs; Pulse circuits; Pulse measurements; Stress measurement; Voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191565
