DocumentCode :
3557211
Title :
Radiation and hot-electron hardened MOS structures based on SiO2grown in O2+NF3
Author :
Da Silva, Eronides F., Jr. ; Nishioka, Yasushiro ; Ma, T.P.
Author_Institution :
Yale University, New Haven, Connecticut
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
848
Lastpage :
849
Keywords :
Annealing; Electron traps; Frequency; Microelectronics; Oxidation; Radiation hardening; Resistance; Secondary generated hot electron injection; Thermal degradation; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191566
Filename :
1487524
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557211
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