DocumentCode :
3557213
Title :
OMCVD Grown InP/InGaAs heterojunction bipolar transistors
Author :
Schumacher, H. ; Hayes, J.R. ; Bhat, R. ; Koza, M.
Author_Institution :
Bell Communications Research Inc., Red Bank, NJ
Volume :
33
fYear :
1987
fDate :
1987
Firstpage :
852
Lastpage :
853
Keywords :
Application specific integrated circuits; Bipolar integrated circuits; Current density; Detectors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Photonic band gap; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1987 International
Type :
conf
DOI :
10.1109/IEDM.1987.191568
Filename :
1487526
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3557213
بازگشت