Title :
Millimeter wave double heterojunction pseudomorphic power HEMTs
Author :
Smith, P. ; Lester, L. ; Chao, P. ; Lee, B. ; Smith, R. ; Ballingall, J. ; Duh, K.
Author_Institution :
GE Electronics Laboratory, Syracuse, New York
Keywords :
Doping; Electrons; Fingers; Frequency; HEMTs; Heterojunctions; Indium gallium arsenide; MODFETs; Power generation; Superlattices;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191569
