Title :
Fabrication results of a silicon epitaxial lateral overgrowth bipolar transistor without a buried collector
Author :
Schubert, P. ; Klaasen, W. ; Siekkinen, J. ; Duey, S. ; Neudeck, G.
Author_Institution :
Purdue University, W. Lafayette, IN
Keywords :
Bipolar transistors; Dielectric devices; Fabrication; Frequency; Geometry; Isolation technology; Lithography; Parasitic capacitance; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191577
