Title :
InAlAs/InGaAs resonant tunneling bipolar transistors (RBTs) operating at room temperature with high current gains
Author :
Futatsugi, T. ; Yamaguchi, Y. ; Muto, S. ; Yokoyama, N. ; Shibatomi, A.
Author_Institution :
Fujitsu Laboratories, Ltd., Atsugi, Japan
Keywords :
Bipolar transistors; Current density; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; P-n junctions; Resonant tunneling devices; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1987 International
DOI :
10.1109/IEDM.1987.191579
