DocumentCode
3557224
Title
InAlAs/InGaAs resonant tunneling bipolar transistors (RBTs) operating at room temperature with high current gains
Author
Futatsugi, T. ; Yamaguchi, Y. ; Muto, S. ; Yokoyama, N. ; Shibatomi, A.
Author_Institution
Fujitsu Laboratories, Ltd., Atsugi, Japan
Volume
33
fYear
1987
fDate
1987
Firstpage
877
Lastpage
878
Keywords
Bipolar transistors; Current density; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; P-n junctions; Resonant tunneling devices; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1987 International
Type
conf
DOI
10.1109/IEDM.1987.191579
Filename
1487537
Link To Document